深圳市洪得盛科技有限公司
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型号 | 品牌 | 批号 | 数量 | 封装 | 备注 |
IKW50N60H3 | Infineon | 13+ | 2500 | TO247 | Original 全新原装 |
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCE |
600 |
V |
DC collector current,limited by Tvjmax
TC = 25°C
TC = 100°C |
IC |
100.0
50.0 |
A |
Pulsed collector current, tplimited by Tvjmax |
ICpul s |
200.0 | |
Turn off safe operating area VCE≤600V, Tvj≤175°C |
- |
200.0 | |
Diode forward current, limited by Tvjmax
TC = 25°C
TC= 100°C |
IF |
60.0
30.0 | |
Diode pulsed current, tplimited by Tjmax |
IFpul s |
200.0 | |
Gate-emitter voltage |
VGE |
±20 |
V |
Short circuit withstand time
VGE = 15V, VCC≤400V
Allowed number of short circuits<1000
Time between short circuits:≥1.0s, Tvj≤150°C |
tSC |
5 |
us |
Power dissipation TC= 25°C
Power dissipation TC= 100°C |
Pt ot |
333.0
167.0 |
W |
Operating
unction temperature |
Tvj |
-40...+175 |
°C |
Storage temperature |
Tstg |
-55...+150 | |
Soldering temperature,
Wave soldering 1.6mm (0.063 in.) from case for 10s |
|
260 | |
Mounting torque,M3 screw
Maximum of mounting processes:3 |
M |
0.6 |
Nm |