IGBT单管K40H1203 / IKW40N120H3 完美替代K40T120 (IKW40T120) / K40T1202 (IKW40N120T2)

英飞凌K40H1203 / IKW40N120H3是英飞凌第三代1200V高开关速度IGBT单管, 能够完美替代K40T120 / K40T1202 ，专用于焊接、太阳能发电逆变器和UPS等IGBT高频应用领域。

K40H1203( IKW40N120H3) / K40T120 (IKW405T120) / K40T1202 (IKW40N120T2) 参数比较说明：

Type	V_CE	I_C	V_CE(sat) Tvj= 5°C	Tvj (max)	Marking	Package
IKW40N120H3	1200V	40A	2.05V	175°C	K40H1203	PG-TO247-3
IKW40N120T2	1200V	40A	1.75V	175°C	K40T1202	PG-TO247-3
IKW40T120	1200V	40A	1.7V	150°C	K40T120	PG-TO247-3

K40H1203（IKW40N120H3 ）特点：

▼最高结温度为175℃

▼非常低VCEsat
▼低开关损耗
▼较高的开关坚韧性

▼内置快速恢复反并联二极管
▼根据JEDEC1合格为目标
▼无铅引脚电镀符合RoHS标准

应用范围：

▼UPS(不中断电源/不间断电源)
▼焊接器

▼太阳能发电用逆变器

有关产品订购电话：0755-83278427 洪先生

K40H1203( IKW40N120H3) / K40T120 (IKW40T120) / K40T1202 (IKW40N120T2) 最大额定值比较说明:

Parameter	Symbol	Value			Unit
Parameter	Symbol	K40H1203	K40T1202	K40T120	Unit
Collector-emitter voltage	VCE	1200	1200	1200	V
DC collector current TC = 25°C TC = 100°C	IC	80 40	75² 40	75 40	A
Pulsed collector current, tp limited by Tjmax	ICpul s	160	160	105
Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C	-	160	160	105
Diode forward current TC = 25°C TC = 100°C	IF	40 20	75² 40	80 40
Diode pulsed current, tp limited by Tjmax	IFpul s	160	160	105
Gate-emitter voltage	VGE	±20	±20	±20	V
Short circuit withstand time2) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C	tSC	10	10	10	us
Power dissipation TC = 25°C	Pt ot	483.0 220.0	480	270	W
Operating junction temperature	Tj	-40...+175	-40...+175	-40...+150	°C
Storage temperature	Tstg	-55...+150	-55...+150	-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only	-	260	260	260
Mounting torque,M3 screw Maxim of mounting processes:3	M	0.6	-	-	Nm

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